Publications (2006 to 2008)

2008

"2D-simulation of inverted metamorphic GaInP/GaAs/GaInAs triple junction solar cell", Li, Z.Q.; Xiao, Y.G.; Lestrade, M.; Li, Z.M. Simon; Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE, 2008 , Page(s): 1 - 6
"Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser", Wei Shi; Chrostowski, L.; Faraji, B.; Photonics Technology Letters, IEEE Volume: 20 , Issue: 24, 2008 , Page(s): 2141 - 2143
"Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling", Yu, Peichen; Chiu, C. H.; Wu, Yuh-Renn; Yen, H. H.; Chen, J. R.; Kao, C. C.; Yang, Han-Wei; Kuo, H. C.; Lu, T. C.; Yeh, W. Y.; Wang, S. C.; Applied Physics Letters; Volume: 93 , Issue: 8, 2008 , Page(s): 081110 - 081110-3
"Polarization-dependent optical characteristics of violet InGaN laser diodes", Yen, Sheng-Horng; Kuo, Yen-Kuang; Journal of Applied Physics Volume: 103 , Issue: 10, 2008 , Page(s): 103115 - 103115-6
"Voltage controlled operation of a transistor vertical cavity surface emitting laser", Wei Shi; Chrostowski, L.; Faraji, B.; Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International; 2008 , Page(s): 89 - 90
"Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm", Laakso, A.; Viheriala, J.; Dumitrescu, M.; Tommila, J.; Haring, K.; Leinonen, T.; Ranta, S.; Pessa, M.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on; 2008 , Page(s): 17 - 18
" Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs", Jun-Rong Chen; Tsung-Shine Ko; Tien-Chang Lu; Yi-An Chang; Hao-Chung Kuo; Yen-Kuang Kuo; Jui-Yen Tsai; Li-Wen Laih; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 13, 2008 , Page(s): 1891 - 1900
"Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect", Brown, G. F.; Ager, J. W.; Walukiewicz, W.; Schaff, W. J.; Wu, J.; Applied Physics Letters; Volume: 93 , Issue: 26, 2008 , Page(s): 262105 - 262105-3
"Control of optical mode distribution through etched microstructures for improved broad area laser performance", Crump, P.; Leisher, P.; Matson, T.; Anderson, V.; Schulte, D.; Bell, J.; Farmer, J.; DeVito, M.; Martinsen, R.; Kim, Y. K.; Choquette, K. D.; Erbert, G.; Trankle, G.; Applied Physics Letters, Volume: 92 , Issue: 13, 2008 , Page(s): 131113 - 131113-3
"High speed VCSELs with separated quantum wells" Lysak, V.V.; Safonov, I.M.; Song, Y.M.; Sukhoivanov, I.A.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on; 2008 , Page(s): 89 - 90
" Design optimization of GaInNAs quantum wells for long wavelength VCSEL", Alias, M.S.; Maulud, M.F.; Mitani, S.; Shaari, S.; Manaf, N.; Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on; 2008 , Page(s): 311 - 315
"Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes", Jun-Rong Chen; Tsung-Shine Ko; Po-Yuan Su; Tien-Chang Lu; Hao-Chung Kuo; Yen-Kuang Kuo; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 17, 2008 , Page(s): 3155 - 3165
"Based simulation of high gain and low breakdown voltage InGaAs/InP avalanche photodiode", Lei, W.; Guo, F.M.; Lu, W.; Xiong, D.Y.; Zhu, Z.Q.; Chu, J.H.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on; 2008 , pp. 37 - 38
"Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells", Ni, Xianfeng; Fan, Qian; Shimada, Ryoko; Ozgur, Umit; Morkoc, Hadis; Applied Physics Letters, Volume: 93 , Issue: 17, 2008 , pp. 171113 - 171113-3
"The origin of efficiency droop in GaN-based light-emitting diodes and its solution", Jong Kyu Kim; Min-Ho Kim; Schubert, M.F.; Qi Dai; Tan Sakong; Sukho Yoon; Cheolsoo Sone; Yongjo Park; Piprek, J.; Schubert, E.F.; Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 2008 , pp. 1 - 2
"Study of grain boundaries influence on electrical properties of nitrides", A. Szyszka, B. Paszkiewicz, R. Paszkiewicz & M. Tlaczala, Vaccum, Vol. 82, No. 10, pp. 1034-1039 (June 3 2008)
"Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers", Jun-Rong Chen & al., Journal of Lightwave Technology, Vol. 26, No. 3, pp. 329-337 (Feb. 1 2008)
"Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers", A.A. Dyomin, V.V. Lysak, S.I. Petrov, Y.T. Lee & I.A. Sukhoivanov, Optics and Lasers in Engineering Volume 46, Issue 3, March 2008, pp. 211-216
"An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study" J. Pakarinen, V. Polojarvi, & al. Applied Surface Science, Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2985-2988
Characterization and optimization of high-power InGaAs/InP photodiodes" H. Pan; A. Beling; H. Chen ; J. C. Campbell, Optical and Quantum Electronics, Volume 40, Number 1 / January, 2008, pp. 41-46
"Advanced InGaAs/InAlAs/InP avalanche photodiodes for high-speed detection of 1.55 µm infrared radiation", Kaniewski, J.; Muszalski, J.; Piotrowski, J., Infrared Spaceborne Remote Sensing and Instrumentation XVI. Edited by Strojnik, Marija. Proceedings of the SPIE, Volume 7082, pp. 70820F-70820F-6 (2008)
"Optical modeling of laterally-corrugated ridge-waveguide gratings", A. Laakso; M. Dumitrescu; & al., Optical and Quantum Electronics, Volume 40, Numbers 11-12 / September, 2008, pp. 907-920
"Improvement in piezoelectric effect of violet InGaN laser diodes", Sheng-Horng Yen and Yen-Kuang Kuo, Optics Communications, Volume 281, Issue 18, 15 September 2008, Pages 4735-4740
"A comparative study on single and double channel AlGaN/GaN high electron mobility transistor", Jing Yao Zheng; Jenq Shinn Wu; Der Yuh Lin; Hung Ji Lin, physica status solidi (c), Volume 5 Issue 6, Pages 1944 - 1946, Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)
"Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes" Han-Youl Ryu and Kyoung-Ho Ha, Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)
"Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm" Martin F. Schubert, Frank W. Mont, & al., Optics Express, Vol. 16, Issue 8, pp. 5290-5298 (2008)

2007

"Junction temperature and reliability of high-power flip-chip light emitting diodes", Z.Z. Chen & al.; Materials Science in Semiconductor Processing, Vol. 10, Issues 4-5 (August-October 2007), pp. 206-210
"Simulation of Intra-Cavity Contacted Oxide-Confined Vertical Cavity Surface Emitting Lasers for 10 Gb/s Ultrashort Optical Interconnections", Lysak, V. & Yong-Tak Lee, 9th International Conference on Transparent Optical Networks (1-5 July 2007), Vol. 2, pp. 132-136
"Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers", Y.-K. Kuo, J.-R. Chen, M.-L. Chen & B.-T. Liou, Applied Physics B: Lasers and Optics, Volume 86, Number 4.
"Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology", Kamil Kosiel, Jan Muszalski, Anna Szerling, Maciej Bugajski & Rafal Jakiela, Vol. 82, Issue 4 (12 December 2007), pp. 383-388
"Highly efficient resonant-cavity light-emitting diodes for compact color projectors", Lysak, V.V. & Lee, Y.-T., International Workshop on Optoelectronic Physics and Technology 2007 (20-22 June 2007)
"Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes", Fu Sheng-Hui, Song Guo-Feng & Chen Liang-Hui, 2007 Chinese Phys. 16 pp.817-820
"Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions", S. M. Mitani, P. K. Choudhury & M. S. Alias, Journal of Russian Laser Research, Vol. 28, No. 6
"Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings", Fu Shenghui, Song Guofeng & Chen Lianghui, Applied Physics A: Materials Science & Processing, Vol. 89, No. 4
"Fabrication and properties of coherent-structure In-polarity InN/In_0.7Ga_0.3N multiquantum wells emitting at around 1.55 μm", Song-Bek Che, Tomoyasu Mizuno, Xinqiang Wang, Yoshihiro Ishitani & Akihiko Yoshikawa, Journal of Applied Physics 102, 083539 (October 2007)
"Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates", T Swietlik & al., 2007 Semicond. Sci. Technol. 22 pp.736-741
"Etched Micro-structures for Control of Optical Mode Distribution for Improved Broad Area Laser Performance", Crump, P. & al., Optical Society of America - CLEO/QELS Conference, 6-11 May 2007
"Investigation of violet InGaN laser diodes with normal and reversed polarizations", Sheng-Horng Yen, Yen-Kuang Kuo, Meng-Lun Tsai & Ta-Cheng Hsu, Appl. Phys. Lett. / Volume 91 / Issue 20 / LASERS, OPTICS, AND OPTOELECTRONICS, 16 Nov. 2007
"Gain and threshold properties of InGaAsN/GaAsN material system for 1.3μm semiconductor lasers", Sheng-Horng Yen, Mei-Ling Chen & Yen-Kuang Kuo, Optics & Laser Technology 39 (2007), pp. 1432¨C1436
"Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3μm semiconductor lasers", Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, Mei-Ling Chen & Bo-Ting Liou, Optics Communications Volume 275, Issue 1, 1 July 2007, pp. 156-164
"Simulation of quantum wells with ‘spikes’ and ‘dips’ ", Laakso, A; Dumitrescu, M.; Toikkanen, L.; Tukiainen, A.; Rimpilainen, V.; Pessa, M., NUSOD '07 (24-28 Sept. 2007)
"Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures", D.Y. Lin, J.D. Wu, J.Y. Zheng & C.F. Lin, Physica E: Low-dimensional Systems and Nanostructures, Volume 40, Issue 5, pp. 1763-5, 17th International Conference on Electronic Properties of Two-Dimensional Systems
"Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures", D.Y. Lin, M.C. Wu, H.J. Lin & W.L. Chen, Physica E: Low-dimensional Systems and Nanostructures Volume 40, Issue 5, pp. 1380-1382, 17th International Conference on Electronic Properties of Two-Dimensional Systems
"Origin of efficiency droop in GaN-based light-emitting diodes", Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, & E. Fred Schubert, Appl. Phys. Lett. 91, 183507 (2007)
"Simulation of deep ultraviolet light-emitting diodes", Yen-Kuang Kuo & Sheng-Horng Yen, Proceedings of SPIE -- Volume 6669, Seventh International Conference on Solid State Lighting (Sep. 14, 2007)
"Numerical simulation of top-emitting organic light-emitting diodes with electron and hole blocking layers", Shu-Hsuan Chang & Cheng-Hong Yang, Proceedings of SPIE -- Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
"Numerical simulation of bright white multilayer organic light-emitting diodes", Mei-Ling Chen, Cheng-Hong Yang, Chien-Yang Wen, Shu-Hsuan Chang & Yen-Kuang Kuo, Proceedings of SPIE -- Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
"Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes", Yen-Kuang Kuo, Sheng-Horng Yen & Miao-Chan Tsai, Proceedings of SPIE -- Volume 6669,Seventh International Conference on Solid State Lighting, 66691I (Sep. 14, 2007)
"Modeling of GaN based resonant-cavity light-emitting diode", Z. Simon Li & Z. Q. Li, Proceedings of SPIE -- Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (Feb. 13, 2007)
"Optical properties of In_0.3Ga_0.7N/GaN green emission nanorods fabricated by plasma etching", C H Chiu & al.,2007 Nanotechnology 18 335706
"Design and properties of InGaAs/InGaAsP/InP avalanche photodiode", Daniel Ha?ko - Jaroslav Kov¨¢c - Franti?ek Uherek - Jaroslava ?kriniarov - J¨¢n Jakabovic - Lor¨¢nt Peternai, Journal of Electrical Engineering, Vol. 58, No. 3, 2007, pp. 173¨C176
"Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs", Chen, Jun-Rong; Chang, Yi-An; Kuol, Hao-Chung; Lu, Tien-Chang; Kuo, Yen-Kuang; Wang, Shing-Chung; CLEO/Pacific Rim 2007, 26-31 Aug. 2007
"Comprehensive modelling of resonant-cavity light-emitting diode", Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1633-1636
"Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell", Li Z. Q.; Xiao Y. G.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1637-1640
"Dynamic drift-diffusion simulation of InP/InGaAs SAGCM APD", Xiao Y. G.; Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1641-1645
"Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS", Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li, Proceedings of SPIE -- Volume 6660, Infrared Systems and Photoelectronic Technology II, (Sep. 12, 2007)
"Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS", Y. G. Xiao, M. Lestrade, Z. Q. Li, and Z. M. S. Li , Proceedings of SPIE -- Volume 6651, Photovoltaic Cell and Module Technologies, (Sep. 11, 2007)

2006

"Avalanche photodiode with sectional InGaAsP/InP charge layer", D. Haško, J. Kováč, F. Uherek, J. Škriniarová, J. Jakabovič & L. Peternai, Microelectronics Journal,Volume 37, Issue 6, June 2006, pp. 483-6
"3D Simulations on Realistic GaN-Based Light-Emitting Diodes", Simon Li, Z.Q. Li, O. Shmatov, C.S. Xia, W. Lu, Materials Research Society, Paper #: 0892-FF12-12.
"Modeling of multi-junction solar cells by Crosslight APSYS", Li, Z. Q.; Xiao, Y. G.; Li, Z. M. Simon, High and Low Concentration for Solar Electric Applications. Proceedings of the SPIE, Volume 6339, pp. 633909 (2006).
"Red Light Vertical-Cavity Surface-Emitting Lasers", ZHANG Yan, PENG Biao, LIU Guang-yu, SUN Yah-fang, LI Te & CUI Jin-jiang; OME Information Vol. 12 (2006), pp.27-34
"Top mirror optimization of high-speed intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers", V. V. Lysak, Ki Soo Chang & Y.T. Lee, Journal of Optoelectronics and Advanced Materials, Vol. 8, No. 1, February 2006, pp. 355-358
"Structure optimization of high speed intracavity-contacted oxide-confined VCSELs", V.V. Lysak & Y.T.Lee, Joint International Conference on Optical Internet and Next Generation Network (2006)
"Accurate modelling of InGaN quantum wells", Hans Wenzel, Optical and Quantum Electronics, Vol. 38, No. 12-14 / Sep. 2006
"Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes", Man-Fang Huang & Yu-Lung Sun, Japanese Journal of Applied Physics Vol. 45, No. 10A, 2006, pp. 7600-7604.
"Study of quantum and short-channel effects for sub-50nm FINFETS," Wei-Da HU, Xiao-Shuang CHEN, Zhi-Jue QUAN, Xu-Chang ZHOU and Wei LU, Journal of Infrared and Millimeter Waves, vol. 25, No. 2, p. 90-94, 2006
"High-power distributed feedback laser diodes emitting at 820 nm," Shenghui FU, Yuan Zhong, Guofeng Song, Lianghui Chen, Chinese Journal of Semiconductors, vol. 27, No. 6, p. 966-969, 2006.
"Effects of Built-In Polarization on InGaN-GaN Vertical-Cavity Surface-Emitting Lasers," Joachim Piprek, Robert Farrell, Steve DenBaars, and Shuji Nakamura, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006, p.7
"A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling", H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri, Member, IEEE, and P. Bienstman, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006, p. 64
Man-Fang Huang, Member, IEEE, and Tsung-Hung Lu, "Optimization of the Active-Layer Structure for the Deep-UV AlGaN Light-Emitting Diodes," IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 8, AUGUST 2006, p. 820
H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, "Highly stable temperature characteristics of InGaN blue laser diodes", APPLIED PHYSICS LETTERS 89, 031122 (2006)
O. Douheret, K. Maknys and S. Anand, "Electrical Characterisation of III-V Buried Heterostructure Lasers by Scanning Capacitance Microscopy", in NATO Science Series, Volume 186, Springer Netherlands, 2006, Pages 413-424
Christoph Wachter, "INTEGRATED OPTICS DESIGN: SOFTWARE TOOLS AND DIVERSIFIED APPLICATIONS", in NATO Science Series II: Mathematics, Physics and Chemistry Frontiers in Planar Lightwave Circuit Technology, Design, Simulation, and Fabrication, Siegfried Janz, Jiri Ctyroky and Stoyan Tanev, ed., Springer Netherlands 2006
Yi-An Chang, Sheng-Horng Yen, Te-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang, "Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes," Semicond. Sci. Technol. 21 No 5 (May 2006) 598-603
Yow-Jon Lin and Yow-Lin Chu, "Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique," Semicond. Sci. Technol. 21 No 8 (August 2006) 1172-117
D. Y. Lin, W. C. Lin, and J. J. Shiu, "Optical study of the AlGaN/GaN high electron mobility transistor structures," Phys. Stat. Sol. (a) 203, No. 7, 1856-1860 (2006)
Yen-Kuang KUO, Shang-Wei HSIEH and Hsiu-Fen CHEN, "Numerical Study on Optimization of Active Regions for um AlGaInAs and InGaAsN Material Systems", Japanese Journal of Applied Physics, Vol. 45, No. 3A, 2006, pp. 1588-1590
Bao-Jen Pong, Chi-Hsing Chen, Sheng-Horng Yen, Jin-Fu Hsu, Chun-Ju Tun, Yen-Kuang Kuo, Cheng-Huang Kuo, Gou-Chung Chi,"Abnormal blue shift of InGaN micro-size light emitting diodes", Solid-State Electronics 50 (2006) 1588-159
Takashi Kyonoa, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi and Koshi Ando, "Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates", JOURNAL OF APPLIED PHYSICS 99, 114509 (2006)
I. Ahmad, V. Kasisomayajula, D. Y. Song, L. Tian, J. M. Berg, and M. Holtz, "Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations", JOURNAL OF APPLIED PHYSICS 100, 113718 (2006)
Joachim Piprek, "GaN-based Devices: Physics and Simulation", Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MA2
S.-H. Yen, B.J. Chen, Y.-K. Kuo, "Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes", Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC1
C. S. Xia, W. Lu, Z. M. Simon Li, Z. Q. Li, "Simulation of InGaN/GaN multiple quantum well light emitting diodes with Quantum Dot electrical and optical effects", Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC3
Y. Sheng, O. Shmatov, Z. M. Simon Li, "3D Simulation of InGaN/GaN Micro-Ring Light-Emitting Diodes," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC5
M. Nadir, "First and second order DFB lasers with GaInNAs-GaAs quantum-well", Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper TuP9
I.-S. Chung, Y. T. Lee, "Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSEL", Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper WB3
Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo, "Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes", Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340N-1 (2006)
Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, Yen-Kuang Kuo, "Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education", Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340R-1 (2006)
Y. G. Xiao, Z. Q. Li, Z. M. Simon Li, "Modeling of avalanche photodiodes by Crosslight APSYS", Infrared and Photoelectronic Imagers and Detector Devices II, edited by Randolph E. Longshore, Ashok Sood, Proc. of SPIE Vol. 6294, 62940Z-1 (2006)
Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li, "Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 μm", Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611508-1 (2006)
Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, "Optimization study on active layers and optical performance for 1.3-um AlGaInAs and InGaNAs semiconductor lasers", Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611526-1 (2006)
Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen, "Numerical simulation of AlInGaN ultraviolet light-emitting diodes" Optoelectronic Devices: Physics, Fabrication, and Application III, edited by Joachim Piprek, Jian Jim Wang, Proceedings of SPIE Vol. 6368, 636812 (2006)
H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri and P. Bienstman, "A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling", IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006,p. 64
Yi-An Chang, Sheng-Horng Yen, Te-ChungWang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang, "Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes", Semicond. Sci. Technol. 21 (2006) 598-603
Yow-Jon Lin1 and Yow-Lin Chu, "Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique", Semicond. Sci. Technol. 21 (2006) 1172-1175
Yi-An Chang, Tsung-Shine Ko, Jun-Rong Chen2, Fang-I Lai,Chun-Lung Yu, I-Tsung Wu, Hao-Chung Kuo,Yen-Kuang Kuo, Li-Wen Laih, Li-Horng Laih, Tin-Chang Lu and Shing-Chung Wang, "The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers", Semicond. Sci. Technol. 21 (2006) 1488-1494
Shang-Wei Hsieh and Yen-Kuang Kuo, "A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs/InP MQW lasers", Applied Physics A: Materials Science & Processing, Volume 82, Number 2