APSYS

APSYS, Advanced Physical Models of Semiconductor Devices, is based on 2D/3D finite element analysis of electrical, optical and thermal properties of compound semiconductor devices, with silicon as a special case. Emphasis has been placed on band structure engineering and quantum mechanical effects. Inclusion of various optical modules also makes this simulation package attractive for applications involving photosensitive or light emitting devices. Click here for details.

Applications

Diodes, transistors and various other types of silicon devices
LEDs and OLEDs
Solar cells
Photodetectors (PD)
High electron mobility transistors (HEMT)
Heterojunction bipolar transistors (HBT)
Resonant tunneling diodes (RTD)
Quantum well infrared photodetectors (QWIP)
Small MOS devices with strong quantum mechanical effects (Quantum-MOS)
Power devices

Features

Restart from previous saved status
Industry leading numerical convergence
Extensive material macro library
Hydrodynamic models for hot carriers
Quantum tunneling & transport
Thermionic emission model
Heat transfer equations
Deep level traps and trap dynamics
Interface states
Poole-Frenkel model
Self-consistent QW calculations
Temperature-dependent model
Impact ionization